J. M. Ballingall

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

P.C. Chao, M. S. Shur, R. C. Tiberio et al. · IEEE Transactions on Electron Devices · 1989 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT

K.H.G. Duh, P.C. Chao, S.M.J. Liu et al. · IEEE Microwave and Guided Wave Letters · 1991 · 135 citations

Engineering, Electrical Engineering, Microelectronics +16

Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide

J. M. Ballingall, C. E. C. Wood · Applied Physics Letters · 1982 · 110 citations

Engineering, Materials Engineering, Materials Science +17

Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs

P. Ho, Ming-Yih Kao, P.C. Chao et al. · Electronics Letters · 1991 · 103 citations

Engineering, Electrical Engineering, Materials Science +17