Electronics Letters · 1991 · 103 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsEpitaxial InterfacesEpitaxial MaterialsGallium Nitride Microwave Integrated CircuitsHeterostructure DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-electron-mobility TransistorsMaximum Gain
High electron mobility transistors (HEMTs) based on the InAlAs/InGaAs heterojunction grown lattice matched to InP were fabricated with 0.15 μm T-shaped gates. The use of an undoped InGaAs cap layer in the epitaxial structure leads to excellent gate characteristics and very high transistor gain. At 95 GHz, a maximum available gain of 13.6 dB was measured. A maximum frequency of oscillation fmax of 455 GHz was obtained by extrapolating from 95 GHz at –6 dB/octave. This is the best reported gain performance for any transistor.
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Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy
P. Ho, P.C. Chao, K.H.G. Duh et al. · 2003 · 26 citations
0.15 mu m gate-length double recess pseudomorphic HEMT with f/sub max/ of 350 GHz
L. F. Lester, P.M. Smith, P. Ho et al. · 2003 · 14 citations