Ming-Yih Kao - Concepedia

Author

Ming-Yih Kao

General Electric (United States)

Also Known As

Kao, Ming-yih, M. -Y. Kao, M. Kao, M. Y. Kao, M.-Y. Kao, M.Y. Kao, Ming-Yih Kao, Ming-Yih. Kao

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

General Electric (United States)Syracuse University Martin Marietta Materials (United States)

About

Ming-Yih Kao is an author at General Electric (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	40	1.8K
2	Electrical Engineering	23	40	1.8K
3	Applied Physics	17	24	1.2K
4	Computer Engineering	2	2	34
5	Chemical Engineering	1	1	71

Ming-Yih Kao

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs P.C. Chao, A.J. Tessmer, K.H.G. Duh, IEEE Electron Device Letters Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency Device	1990	205
W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ P.M. Smith, Shikuan Liu, Ming-Yih Kao, IEEE Microwave and Guided Wave Letters Ghz F/sub Max/Wide-bandgap SemiconductorEngineeringμM Gate-width DeviceIntegrated Circuits	1995	177
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology Charles F. Campbell, Cathy Lee, Victoria Williams, IEEE Journal of Solid-State Circuits Electrical EngineeringSic Device TechnologyEngineeringRf SemiconductorPower Device	2009	154
A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT K.H.G. Duh, P.C. Chao, S.M.J. Liu, IEEE Microwave and Guided Wave Letters Super Low-noise 0.1Electrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	1991	135
Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs P. Ho, Ming-Yih Kao, P.C. Chao, Electronics Letters Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringElectronic Engineering	1991	103
GaN Takes the Lead Charles F. Campbell, Anthony Balistreri, Ming-Yih Kao, IEEE Microwave Magazine Microwave CircuitsElectrical EngineeringGallium NitrideRf Monolithic MicrowaveEngineering	2012	71
HEMT degradation in hydrogen gas P.C. Chao, Ming-Yih Kao, Karen J. Nordheden, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyChemical EngineeringElectronic DevicesElectrical Engineering	1994	71
W-band InGaAs HEMT low noise amplifiers K.H.G. Duh, P.C. Chao, P. Ho, Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering	1990	67
Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs Ming-Yih Kao, P.M. Smith, P. Ho, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	1989	64
High efficiency Ka-band Gallium Nitride power amplifier MMICs Charles F. Campbell, Yueying Liu, Ming-Yih Kao, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2013	60

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