A.J. Tessmer

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +8

Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs

P. Ho, Ming-Yih Kao, P.C. Chao et al. · Electronics Letters · 1991 · 103 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +9

Diamond devices and electrical properties

Bradley A. Fox, M. L. Hartsell, Dean Malta et al. · Diamond and Related Materials · 1995 · 80 citations

Physical Property, Electrical Engineering, Electrical Property +1

W-band InGaAs HEMT low noise amplifiers

K.H.G. Duh, P.C. Chao, P. Ho et al. · 1990 · 67 citations

Electrical Engineering, Engineering, Rf Semiconductor +9

High-temperature operation of polycrystalline diamond field-effect transistors

A.J. Tessmer, Linda S. Plano, D.L. Dreifus · IEEE Electron Device Letters · 1993 · 39 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +10