Concepedia

Author

A.J. Tessmer

General Electric (United States)

Also Known As

A. J. Tessmer, A. Tessmer, A.J. Tessmer, Alison J. Tessmer

16

Publications

633

Citations

9

H-Index

18

Concepts

All Affiliations

General Electric (United States)Syracuse University
AT

About

A.J. Tessmer is an author at General Electric (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Electrical Engineering

9

9

600

2

Engineering

8

8

520

3

Applied Physics

7

7

453

4

Electronic Devices

1

1

39

5

Integrated Circuits

1

1

24

A.J. Tessmer

×

9

Publications

600

Citations

9

H-Index

YearCitations

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

P.C. Chao, A.J. Tessmer, K.H.G. Duh,

IEEE Electron Device Letters

1990

205

Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs

P. Ho, Ming-Yih Kao, P.C. Chao,

Electronics Letters

1991

103

Diamond devices and electrical properties

Bradley A. Fox, M. L. Hartsell, Dean Malta,

Diamond and Related Materials

1995

80

W-band InGaAs HEMT low noise amplifiers

K.H.G. Duh, P.C. Chao, P. Ho,

1990

67

High-temperature operation of polycrystalline diamond field-effect transistors

A.J. Tessmer, Linda S. Plano, D.L. Dreifus

IEEE Electron Device Letters

1993

39

Polycrystalline diamond field-effect transistors

A.J. Tessmer, K. Das, D.L. Dreifus

Diamond and Related Materials

1992

38

16-60 V rated LDMOS show advanced performance in a 0.72 μm evolution BiCMOS power technology

Chin-Yu Tsai, T. Efland, S. Pendharkar,

2002

28

Microwave InAlAs/InGaAs/InP HEMTs: status and applications

P.M. Smith, P.C. Chao, P. Ho,

International Conference on Indium Phosphide and Related Materials

1990

24

Very high performance 0.15 mu m gate-length InAlAs/InGaAs/InP lattice-matched HEMTs

A.J. Tessmer, P.C. Chao, K.H.G. Duh,

2003

16

Page 1