T. Henderson

Optical investigation of highly strained InGaAs-GaAs multiple quantum wells

G. Ji, Daming Huang, U. K. Reddy et al. · Journal of Applied Physics · 1987 · 253 citations · Full text

Ii-vi Semiconductor, Photonics, Optical Investigation +12

Time-resolved Raman scattering in GaAs quantum wells

D. Y. Oberli, D. R. Wake, M. V. Klein et al. · Physical Review Letters · 1987 · 216 citations

Semiconductors, Quantum Science, Engineering +10

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer, W. T. Masselink, John F. Klem et al. · Journal of Applied Physics · 1985 · 194 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +16

Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

T. Henderson, M.I. Aksun, C. K. Peng et al. · IEEE Electron Device Letters · 1986 · 124 citations

Wireless Communications, Excellent Dc, Engineering +21

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

R. Fischer, T. J. Drummond, John F. Klem et al. · IEEE Transactions on Electron Devices · 1984 · 111 citations

Semiconductors, Modulation-doped Fet, Electrical Engineering +14