F. Pagette

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 261 citations

Ghz F/sub Max/, Engineering, Semiconductor Device +17

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Electrical Engineering, Cut-off Frequency, Engineering +13

SiGe HBT technology with f/sub max//f/sub T/ = 350/300 GHz and gate delay below 3.3 ps

Marwan Khater, Jae-Sung Rieh, Thomas Adam et al. · 2005 · 74 citations

Electrical Engineering, Semiconductor Device, Engineering +10

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Zhen Zhang, F. Pagette, C. D'Emic et al. · IEEE Electron Device Letters · 2010 · 59 citations

Engineering, Sharp Reduction, Semiconductor Device +19

SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz

Jae-Sung Rieh, D. Greenberg, Marwan Khater et al. · 2004 · 50 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +9