C. D'Emic

Universal tunneling behavior in technologically relevant P/N junction diodes

P. M. Solomon, J. Jopling, D.J. Frank et al. · Journal of Applied Physics · 2004 · 106 citations

Device Modeling, Semiconductors, Electrical Engineering +13

Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

Anna W. Topol, Douglas Charles La Tulipe, L. Shi et al. · 2006 · 86 citations

Engineering, Device Integration, Integrated Circuits +20

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Zhen Zhang, F. Pagette, C. D'Emic et al. · IEEE Electron Device Letters · 2010 · 59 citations

Engineering, Sharp Reduction, Semiconductor Device +19

Device design considerations for ultra-thin SOI MOSFETs

B. Doris, M. Ieong, Tinggang Zhu et al. · 2003 · 55 citations

Utsoi Devices, Electrical Engineering, Engineering +12

Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks.

C. D'Emic, E. P. Gusev, Ronald D. Schrimpf et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 2003 · 28 citations

Gate Dielectrics, Electrical Engineering, Ion Implantation +10