Tinggang Zhu

Device design considerations for ultra-thin SOI MOSFETs

B. Doris, M. Ieong, Tinggang Zhu et al. · 2003 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics

Feng Zhou, Weizong Xu, Fangfang Ren et al. · IEEE Electron Device Letters · 2021 · 48 citations

Engineering, Electrical Engineering, Materials Science +16

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability

Feng Zhou, Weizong Xu, Fangfang Ren et al. · IEEE Transactions on Power Electronics · 2021 · 35 citations

Engineering, Electrical Engineering, Electronic Materials +15

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

Feng Zhou, Weizong Xu, Fangfang Ren et al. · IEEE Transactions on Power Electronics · 2021 · 35 citations

Engineering, Electrical Engineering, Materials Science +15

Irradiation Hardened <i>p</i>-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm²/mg and 95% Conversion Efficiency at 300 W/500 kHz

Feng Zhou, Can Zou, Tianyang Zhou et al. · IEEE Electron Device Letters · 2024 · 33 citations

Engineering, Electrical Engineering, Materials Engineering +17