Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> An extremely low contact resistivity of <formula formulatype="inline"><tex Notation="TeX">$\hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2}$</tex></formula> between <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si}$</tex></formula> and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in <formula formulatype="inline"><tex Notation="TeX">$IV$</tex></formula> characteristics. </para>