IEEE Electron Device Letters · 2010 · 59 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsDopant DiffusionDopant SegregationResistivitySchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky BarriersSchottky ContactsSilicide Contacts
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> An extremely low contact resistivity of <formula formulatype="inline"><tex Notation="TeX">$\hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2}$</tex></formula> between <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si}$</tex></formula> and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in <formula formulatype="inline"><tex Notation="TeX">$IV$</tex></formula> characteristics. </para>
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N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide
S. Zhu, Kevin J. Chen, M.-F. Li et al. · IEEE Electron Device Letters · 2004 · 207 citations
Zhi‐Jun Qiu, Zhen Zhang, Mikael Östling et al. · IEEE Transactions on Electron Devices · 2008 · 109 citations