Concepedia

Dopant Segregation

Dopant Segregation is the phenomenon in semiconductor crystal growth where impurity atoms exhibit a non-uniform distribution between the solid and liquid phases at the growth interface due to differences in solubility, resulting in a concentration gradient that deviates from ideal incorporation.

500

Publications

19.8K

Citations

1.9K

Authors

531

Institutions

Publications per year

2017–2026

61

Parents

Publications

500

Electrodeposition of α-Fe<sub>2</sub>O<sub>3</sub> Doped with Mo or Cr as Photoanodes for Photocatalytic Water Splitting

Alan Kleiman‐Shwarsctein, Yong‐Sheng Hu, Arnold J. Forman et al. · The Journal of Physical Chemistry C · 2008 · 429 citations

, , +17

Dopant segregation in polycrystalline silicon

Mohammad M. Mandurah, Krishna C. Saraswat, C. R. Helms et al. · Journal of Applied Physics · 1980 · 371 citations

, , +17

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

G. P. Lansbergen, Rajib Rahman, Cameron Wellard et al. · Nature Physics · 2008 · 314 citations

, , +16

Delta doping of III–V compound semiconductors: Fundamentals and device applications

E. F. Schubert · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 296 citations

, , +17

Enhancing grain boundary ionic conductivity in mixed ionic–electronic conductors

Ye Lin, Shumin Fang, Dong Su et al. · Nature Communications · 2015 · 260 citations · Full text

, , +16

1–5 of 500

Authors

1.9K

  1. SM
    S. Mantl

    Forschungszentrum Jülich, Germany

    12 publications · 590 citations

    12

    h-index

  2. QZ
    Qing‐Tai Zhao

    Forschungszentrum Jülich, Germany

    11 publications · 572 citations

    11

    h-index

  3. AF
    A. F. Witt

    Massachusetts Institute of Technology, United States

    9 publications · 470 citations

    9

    h-index

  4. KC
    Krishna C. Saraswat

    Stanford University, United States

    8 publications · 745 citations

    8

    h-index

  5. MÖ
    Mikael Östling

    KTH Royal Institute of Technology, Sweden

    7 publications · 239 citations

    7

    h-index

1–5 of 1.9K

Institutions

531

  1. Centre National de la Recherche Scientifique

    Paris, France

    20 h-index

    96 publications

    3.6K citations

  2. Massachusetts Institute of Technology

    Cambridge, United States

    19 h-index

    62 publications

    3.1K citations

  3. Forschungszentrum Jülich

    Jülich, Germany

    14 h-index

    84 publications

    4.2K citations

  4. The University of Tokyo

    Tokyo, Japan

    13 h-index

    47 publications

    1.2K citations

  5. Oak Ridge National Laboratory

    Oak Ridge, United States

    13 h-index

    35 publications

    2.6K citations

  6. Tohoku University

    Sendai, Japan

    12 h-index

    56 publications

    1.6K citations

  7. University of Illinois Urbana-Champaign

    Urbana, United States

    11 h-index

    28 publications

    1.4K citations

  8. Chinese Academy of Sciences

    Beijing, China

    11 h-index

    83 publications

    1.9K citations

1–8 of 531

Venues

  1. Applied Physics Letters

    53 publications · 2K citations

    26

    h-index

  2. Journal of Applied Physics

    44 publications · 2K citations

    26

    h-index

  3. Journal of Crystal Growth

    60 publications · 1.7K citations

    25

    h-index

  4. Journal of The Electrochemical Society

    JES · 24 publications · 912 citations

    18

    h-index

  5. IEEE Electron Device Letters

    20 publications · 894 citations

    15

    h-index

1–5