G. P. Lansbergen

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

G. P. Lansbergen, Rajib Rahman, Cameron Wellard et al. · Nature Physics · 2008 · 306 citations

Engineering, Physics, Nanoelectronics +7

Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

H. Sellier, G. P. Lansbergen, J. Caro et al. · Physical Review Letters · 2006 · 259 citations · Full text

Electrical Engineering, Engineering, Tunneling Microscopy +13

A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

King‐Yuen Wong, M.-H. Kwan, F.-W. Yao et al. · 2015 · 73 citations

Bulk Leakage, Electrical Engineering, Gate Trapping +11

Orbital Stark effect and quantum confinement transition of donors in silicon

Rajib Rahman, G. P. Lansbergen, Seung H. Park et al. · Physical Review B · 2009 · 62 citations · Full text

Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor

G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen et al. · Physical Review Letters · 2012 · 56 citations · Full text