Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET - Concepedia

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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

306

Citations

40

References

2008

Year

G. P. Lansbergen, Rajib Rahman, Cameron Wellard, Insoo Woo, J. Caro, Nadine Collaert, S. Biesemans, Gerhard Klimeck, Lloyd C. L. Hollenberg, Sven Rogge

EngineeringPhysicsNanoelectronicsQuantum DeviceApplied PhysicsSingle Dopant AtomSilicon On InsulatorGate-induced Quantum-confinement TransitionSilicon FinfetSemiconductor Device

References

	Year	Citations

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