S. Biesemans

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

G. P. Lansbergen, Rajib Rahman, Cameron Wellard et al. · Nature Physics · 2008 · 306 citations

Engineering, Physics, Nanoelectronics +7

Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

H. Sellier, G. P. Lansbergen, J. Caro et al. · Physical Review Letters · 2006 · 259 citations · Full text

Electrical Engineering, Engineering, Tunneling Microscopy +13

Review of FINFET technology

M. Jurczak, Nadine Collaert, A. Veloso et al. · 2009 · 162 citations

Low-power Electronics, Electrical Engineering, Engineering +12

3D stacked IC demonstration using a through Silicon Via First approach

J. Van Olmen, A. Mercha, Guruprasad Katti et al. · 2008 · 141 citations

Engineering, Silicon Vias, Oscillator Topologies +18

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

T. Chiarella, Liesbeth Witters, A. Mercha et al. · Solid-State Electronics · 2010 · 120 citations

Electrical Engineering, Physical Design (Electronics), Engineering +8