S. Biesemans

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

G. P. Lansbergen, Rajib Rahman, Cameron Wellard et al. · Nature Physics · 2008 · 314 citations

Engineering, Electrical Engineering, Physics +16

Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

H. Sellier, G. P. Lansbergen, J. Caro et al. · Physical Review Letters · 2006 · 264 citations · Full text

Natural Sciences, Materials Science, Physics +17

Review of FINFET technology

M. Jurczak, Nadine Collaert, A. Veloso et al. · 2009 · 164 citations

Engineering, Electrical Engineering, Microelectronics +12

3D stacked IC demonstration using a through Silicon Via First approach

J. Van Olmen, A. Mercha, Guruprasad Katti et al. · 2008 · 141 citations

Engineering, Computer Engineering, Electrical Engineering +17

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

T. Chiarella, Liesbeth Witters, A. Mercha et al. · Solid-State Electronics · 2010 · 120 citations

Engineering, Computer Engineering, Electrical Engineering +14