M. Jurczak

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 607 citations

Engineering, Electrical Engineering, Materials Science +12

Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs

Abhisek Dixit, Anil Kottantharayil, Nadine Collaert et al. · IEEE Transactions on Electron Devices · 2005 · 355 citations

Engineering, Electrical Engineering, Electronic Materials +16

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte et al. · Nano Letters · 2014 · 338 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen, Ludovic Goux, Sergiu Clima et al. · IEEE Transactions on Electron Devices · 2013 · 255 citations

Natural Sciences, Materials Engineering, Materials Science +11

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16