Jae-Sung Rieh - Concepedia

Author

Jae-Sung Rieh

Also Known As

J. Rieh, J. S. Rieh, J.-S Rieh, J.-S. Rieh, J.S. Rieh, J.‐S. Rieh, Jae-Sung RIEH, Jae-Sung Rieh, Jae-sung Rieh, Rieh Jae-Sung

212

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

Korea University IBM (United States)IBM Research - Thomas J. Watson Research Center National Yang Ming Chiao Tung University Georgia Institute of Technology

About

Jae-Sung Rieh is an author at Korea University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	63	2.7K
2	Applied Physics	17	23	1.3K
3	Education	1	1	16
4	Health Sciences	1	1	42
5	Natural Sciences	1	1	49

Jae-Sung Rieh

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology B. Jagannathan, Mahmoud Khater, F. Pagette, IEEE Electron Device Letters Ghz F/sub Max/EngineeringSemiconductor DeviceSige Npn HbtsRf Semiconductor	2002	261
SiGe HBTs with cut-off frequency of 350 GHz Jae-Sung Rieh, B. Jagannathan, H. Chen, Electrical EngineeringCut-off FrequencyEngineeringRf SemiconductorPhysics	2003	201
Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer K. K. Linder, F. C. Zhang, Jae-Sung Rieh, Applied Physics Letters EngineeringIntegrated CircuitsSilicon On InsulatorNanoelectronicsMismatched Sige/si	1997	119
Foundation of rf CMOS and SiGe BiCMOS technologies J. Dunn, D. Ahlgren, Douglas Coolbaugh, IBM Journal of Research and Development Electrical EngineeringIbm Sige BicmosEngineeringVlsi DesignRadio Frequency	2003	101
Half-terahertz operation of SiGe HBTs R. Krithivasan, Yuan Lu, John D. Cressler, IEEE Electron Device Letters Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorPhysics	2006	101
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure S.J. Jeng, B. Jagannathan, Jae-Sung Rieh, IEEE Electron Device Letters EngineeringNarrow Base WidthIntegrated CircuitsNon-self-aligned StructureSemiconductor Device	2001	88
SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications Jae-Sung Rieh, B. Jagannathan, D. Greenberg, IEEE Transactions on Microwave Theory and Techniques Thz PhotonicsElectrical EngineeringTerahertz TechnologyEngineeringRf Semiconductor	2004	88
300 GHz Integrated Heterodyne Receiver and Transmitter With On-Chip Fundamental Local Oscillator and Mixers Sooyeon Kim, Jongwon Yun, Daekeun Yoon, IEEE Transactions on Terahertz Science and Technology Heterodyne ReceiverEngineeringRadio FrequencyLocal OscillatorWideband Communication	2014	78
40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology G. Freeman, Mounir Meghelli, Young Kwark, IEEE Journal of Solid-State Circuits 40-Gb/s CircuitsElectrical EngineeringEngineeringVlsi DesignHigh-frequency Device	2002	75
RF characterization and modeling of various wire bond transitions Juhwan Lim, Daehan Kwon, Jae-Sung Rieh, IEEE Transactions on Advanced Packaging Si ChipsElectrical EngineeringAlumina PackagesEngineeringRf Semiconductor	2005	75

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