Jae-Sung Rieh

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 262 citations

Engineering, Electrical Engineering, Microelectronics +15

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder, F. C. Zhang, Jae-Sung Rieh et al. · Applied Physics Letters · 1997 · 119 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Foundation of rf CMOS and SiGe BiCMOS technologies

J. Dunn, D. Ahlgren, Douglas Coolbaugh et al. · IBM Journal of Research and Development · 2003 · 101 citations

Engineering, Electrical Engineering, Microelectronics +16

Half-terahertz operation of SiGe HBTs

R. Krithivasan, Yuan Lu, John D. Cressler et al. · IEEE Electron Device Letters · 2006 · 101 citations

Engineering, Electrical Engineering, Physics +16