X. B. Mei - Concepedia

Author

X. B. Mei

Northrop Grumman (United States)

Also Known As

X B Mei, X. B. Mei, X. MEI, X. Mei, X.B. Mei, X.b. Mei, Xiaobing (Gerry) Mei, Xiaobing B. Mei, Xiaobing Mei

116

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)Jet Propulsion Laboratory University of California San Diego California Institute of Technology

About

X. B. Mei is an author at Northrop Grumman (United States) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	50	2.7K
2	Electrical Engineering	26	39	2.3K
3	Applied Physics	16	20	1.6K
4	Education	2	2	62
5	Computer Engineering	1	1	22

X. B. Mei

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process X. B. Mei, Wayne Yoshida, M. Lange, IEEE Electron Device Letters Thz PhotonicsTerahertz TechnologyEngineeringCircuit AmplifierTerahertz Photonics	2015	395
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz R. Lai, X. B. Mei, W.R. Deal, Thz PhotonicsElectrical EngineeringDb GainEngineeringRf Semiconductor	2007	253
THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors W.R. Deal, X. B. Mei, K.M.K.H. Leong, IEEE Transactions on Terahertz Science and Technology Thz PhotonicsElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2011	219
Power Amplification at 0.65 THz Using InP HEMTs V. Radisic, K.M.K.H. Leong, X. B. Mei, IEEE Transactions on Microwave Theory and Techniques Thz PhotonicsTerahertz DevicesElectrical EngineeringEngineeringTerahertz Technology	2011	123
Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors W.R. Deal, X. B. Mei, V. Radisic, IEEE Microwave and Wireless Components Letters Amplifier ModuleThz PhotonicsElectrical EngineeringTerahertz TechnologyTerahertz Devices	2010	105
Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs W.R. Deal, K.M.K.H. Leong, V. Radisic, IEEE Microwave and Wireless Components Letters Thz PhotonicsElectrical EngineeringTerahertz DevicesTerahertz TechnologyEngineering	2011	105
A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz Lorene Samoska, W.R. Deal, Goutam Chattopadhyay, IEEE Transactions on Microwave Theory and Techniques Amplifier ModuleMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency Device	2008	94
A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors K.M.K.H. Leong, X. B. Mei, Wayne Yoshida, IEEE Microwave and Wireless Components Letters Thz PhotonicsElectrical EngineeringTerahertz TechnologyTerahertz DevicesEngineering	2015	80
850 GHz Receiver and Transmitter Front-Ends Using InP HEMT K.M.K.H. Leong, X. B. Mei, Wayne Yoshida, IEEE Transactions on Terahertz Science and Technology Electrical EngineeringMillimeter Wave TechnologyNm IndiumEngineeringRf Semiconductor	2017	76
A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module V. Radisic, W.R. Deal, K.M.K.H. Leong, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorElectronic Engineering	2010	72

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