X. B. Mei

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

X. B. Mei, Wayne Yoshida, M. Lange et al. · IEEE Electron Device Letters · 2015 · 395 citations

Thz Photonics, Terahertz Technology, Engineering +18

Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

R. Lai, X. B. Mei, W.R. Deal et al. · 2007 · 253 citations

Thz Photonics, Electrical Engineering, Db Gain +13

THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

W.R. Deal, X. B. Mei, K.M.K.H. Leong et al. · IEEE Transactions on Terahertz Science and Technology · 2011 · 219 citations

Thz Photonics, Electrical Engineering, Engineering +12

Power Amplification at 0.65 THz Using InP HEMTs

V. Radisic, K.M.K.H. Leong, X. B. Mei et al. · IEEE Transactions on Microwave Theory and Techniques · 2011 · 123 citations

Thz Photonics, Terahertz Devices, Electrical Engineering +15

Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

W.R. Deal, X. B. Mei, V. Radisic et al. · IEEE Microwave and Wireless Components Letters · 2010 · 105 citations

Amplifier Module, Thz Photonics, Electrical Engineering +13