M. Lange

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

X. B. Mei, Wayne Yoshida, M. Lange et al. · IEEE Electron Device Letters · 2015 · 404 citations

Engineering, Electrical Engineering, Physics +14

Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

W.R. Deal, K.M.K.H. Leong, V. Radisic et al. · IEEE Microwave and Wireless Components Letters · 2011 · 106 citations

Engineering, Electrical Engineering, Microelectronics +16

A W-band InAs/AlSb low-noise/low-power amplifier

W.R. Deal, R. Tsai, M. Lange et al. · IEEE Microwave and Wireless Components Letters · 2005 · 52 citations

Engineering, Electrical Engineering, Microelectronics +16

Wafer-Scale Black Arsenic–Phosphorus Thin-Film Synthesis Validated with Density Functional Perturbation Theory Predictions

Eric P. Young, Junsoo Park, Tingyu Bai et al. · ACS Applied Nano Materials · 2018 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

A W-band low-noise amplifier with 22K noise temperature

Eric Bryerton, X. B. Mei, Youngmin Kim et al. · 2009 · 43 citations

Engineering, Electrical Engineering, Microelectronics +16