Statistics
Publications
40
Citations
2.6K
H-Index
28
Active since
2001
Wayne Yoshida is an author at Northrop Grumman (United States) specializing in engineering, microelectronics, and electrical engineering.
Publications per year
2001–2017
40
40
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Multilayer Alkoxysilane Silylation of Oxide Surfaces
Wayne Yoshida, Robert P. Castro, Jeng‐Dung Jou et al. · Langmuir · 2001 · 158 citations
Power Amplification at 0.65 THz Using InP HEMTs
V. Radisic, K.M.K.H. Leong, X. B. Mei et al. · IEEE Transactions on Microwave Theory and Techniques · 2011 · 124 citations
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