A W-band InAs/AlSb low-noise/low-power amplifier

Abstract

The first W-band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> three-stage co-planar waveguide amplifier with 0.1-μm InAs/AlSb high electron mobility transistor devices is fabricated on a 100-μm GaAs substrate. Minimum noise-figure of 5.4dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16/spl plusmn/1 dB is measured over a 77-103 GHz frequency band.