R. Tsai - Concepedia

Author

R. Tsai

Northrop Grumman (United States)

Also Known As

R. S. Tsai, R. Tsai, R.-S. Tsai, R.S. Tsai, Roger Tsai

Publications

903

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)United States Naval Research Laboratory Redondo Optics (United States)University of Virginia University of Florida

About

R. Tsai is an author at Northrop Grumman (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	29	708
2	Electrical Engineering	17	28	684
3	Applied Physics	12	16	384
4	Computer Engineering	3	3	38
5	Education	2	2	29

R. Tsai

Publications

777

Citations

H-Index

Page 1

	Year	Citations
A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier Mingqi Chen, William Sutton, Ioulia Smorchkova, IEEE Microwave and Wireless Components Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorShunt Feedback Loop	2010	67
A W-band InAs/AlSb low-noise/low-power amplifier W.R. Deal, R. Tsai, M. Lange, IEEE Microwave and Wireless Components Letters Total Chip DissipationElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2005	52
A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz K.W. Kobayashi, YaoChung Chen, Ioulia Smorchkova, IEEE MTT-S International Microwave Symposium digest Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2007	52
Clinical Evaluation Comparing the Efficacy of Aquacel® Ag Hydrofiber® Dressing Versus Petrolatum Gauze With Antibiotic Ointment in Partial-Thickness Burns in a Pediatric Burn Center Salim Charles Saba, R. Tsai, Paul M. Glat Journal of Burn Care & Research	2009	51
Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics R. Tsai, M. Barsky, J.B. Boos, Electrical EngineeringDrain BiasesEngineeringHigh-speed ElectronicsAlsb/inas Hemt	2003	40
0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band R. Grundbacher, R. Lai, M. Barsky, Electrical EngineeringEngineeringDb GainRf SemiconductorHigh-frequency Device	2003	38
AlGaN/GaN HEMTs---operation in the K-band and above Ioulia Smorchkova, M. Wójtowicz, Rajinder Sandhu, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Power	2003	34
1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz K.W. Kobayashi, Yaochung Chen, Ioulia Smorchkova, Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium Wide-bandgap SemiconductorElectrical EngineeringGan DarlingtonEngineeringRf Semiconductor	2007	32
Materials growth for InAs high electron mobility transistors and circuits B. R. Bennett, B.P. Tinkham, J.B. Boos, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2004	31
An indium phosphide MMIC amplifier for 180-205 GHz J.W. Archer, R. Lai, R. Grundbacher, IEEE Microwave and Wireless Components Letters High-performance Indium PhosphideMicrowave CircuitsElectrical EngineeringFrequency BandDb Gain	2001	30

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