Ioulia Smorchkova

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

Debdeep Jena, S. Heikman, Daniel Green et al. · Applied Physics Letters · 2002 · 190 citations · Full text

Wide-bandgap Semiconductor, Engineering, Experimental Realization +18

Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting

Y.C. Chou, D. Leung, Ioulia Smorchkova et al. · Microelectronics Reliability · 2004 · 83 citations

Materials Engineering, Electrical Engineering, Engineering +6

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Mingqi Chen, William Sutton, Ioulia Smorchkova et al. · IEEE Microwave and Wireless Components Letters · 2010 · 67 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

Shih-En Shih, W.R. Deal, Daisuke Yamauchi et al. · IEEE Transactions on Microwave Theory and Techniques · 2009 · 54 citations

Wide-bandgap Semiconductor, Db Flat Gain, Electrical Engineering +9

Wideband AlGaN/GaN HEMT low noise.amplifier for highly survivable receiver electronics

Seonyong Cha, Y. Chung, M. Wojtowwiez et al. · 2004 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Wideband Algan/gan Hemt +13