Ioulia Smorchkova - Concepedia

Author

Ioulia Smorchkova

Northrop Grumman (United States)ORCID

Also Known As

I Smorchkova, I. P. Smorchkova, I. Smorchkova, I.P. Smorchkova, Ioulia Smorchkova

Publications

940

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)Advanced Micro Devices (United States)University of California, Santa Barbara

About

Ioulia Smorchkova is an author at Northrop Grumman (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	22	893
2	Electrical Engineering	18	22	893
3	Applied Physics	13	14	575
4	Materials Science	3	3	227
5	Materials Engineering	2	2	103

Ioulia Smorchkova

Publications

893

Citations

H-Index

Page 1

	Year	Citations
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys Debdeep Jena, S. Heikman, Daniel Green, Applied Physics Letters Wide-bandgap SemiconductorEngineeringExperimental RealizationOptoelectronic DevicesSemiconductors	2002	190
Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting Y.C. Chou, D. Leung, Ioulia Smorchkova, Microelectronics Reliability Materials EngineeringElectrical EngineeringEngineeringCorrosionApplied Physics	2004	83
A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier Mingqi Chen, William Sutton, Ioulia Smorchkova, IEEE Microwave and Wireless Components Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorShunt Feedback Loop	2010	67
Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers Shih-En Shih, W.R. Deal, Daisuke Yamauchi, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorDb Flat GainElectrical EngineeringEngineeringRf Semiconductor	2009	54
Wideband AlGaN/GaN HEMT low noise.amplifier for highly survivable receiver electronics Seonyong Cha, Y. Chung, M. Wojtowwiez, Wide-bandgap SemiconductorElectrical EngineeringWideband Algan/gan HemtEngineeringRf Semiconductor	2004	52
A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz K.W. Kobayashi, YaoChung Chen, Ioulia Smorchkova, IEEE MTT-S International Microwave Symposium digest Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2007	52
Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance K.W. Kobayashi, Yaochung Chen, Ioulia Smorchkova, Wide-bandgap SemiconductorT-gate Hemt TechnologyElectrical EngineeringGan MmicsEngineering	2009	51
AlGaN/GaN HEMTs---operation in the K-band and above Ioulia Smorchkova, M. Wójtowicz, Rajinder Sandhu, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Power	2003	34
1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz K.W. Kobayashi, Yaochung Chen, Ioulia Smorchkova, Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium Wide-bandgap SemiconductorElectrical EngineeringGan DarlingtonEngineeringRf Semiconductor	2007	32
Broadband GaN Dual-Gate HEMT Low Noise Amplifier Sean Shih, W.R. Deal, W. Sutton, Wide-bandgap SemiconductorDb Flat GainElectrical EngineeringDb Compression PointEngineering	2007	32

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