IEEE Microwave and Wireless Components Letters · 2011 · 106 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoise In Electronic DevicesRadio-frequency Integrated CircuitsGainHigh-electron-mobility TransistorsHigh-frequency Amplifier DesignLow-noise AmplificationNoise FigureNoise Figure AnalysisPeak GainTerahertz Semiconductor Devices
In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.
7
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz
W.R. Deal, X. B. Mei, V. Radisic et al. · 2007 · 55 citations
Engineering, Electrical Engineering, Electronic Materials +16
A 300 GHz mHEMT amplifier module
A. Tessmann, Arnulf Leuther, V. Hurm et al. · 2009 · 54 citations