Stephen Sarkozy - Concepedia

Author

Stephen Sarkozy

Northrop Grumman (United States)

Also Known As

S. SARKOZY, S. Sarkozy, Stephen J. Sarkozy, Stephen Sarkozy

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)Jet Propulsion Laboratory California Institute of Technology Cavendish Hospital Stanford University

About

Stephen Sarkozy is an author at Northrop Grumman (United States) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	29	1.6K
2	Electrical Engineering	19	28	1.6K
3	Applied Physics	12	13	1.2K
4	Computer Engineering	4	4	77
5	Education	3	3	50

Stephen Sarkozy

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process X. B. Mei, Wayne Yoshida, M. Lange, IEEE Electron Device Letters Thz PhotonicsTerahertz TechnologyEngineeringCircuit AmplifierTerahertz Photonics	2015	395
THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors W.R. Deal, X. B. Mei, K.M.K.H. Leong, IEEE Transactions on Terahertz Science and Technology Thz PhotonicsElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2011	219
Power Amplification at 0.65 THz Using InP HEMTs V. Radisic, K.M.K.H. Leong, X. B. Mei, IEEE Transactions on Microwave Theory and Techniques Thz PhotonicsTerahertz DevicesElectrical EngineeringEngineeringTerahertz Technology	2011	123
Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors W.R. Deal, X. B. Mei, V. Radisic, IEEE Microwave and Wireless Components Letters Amplifier ModuleThz PhotonicsElectrical EngineeringTerahertz TechnologyTerahertz Devices	2010	105
Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs W.R. Deal, K.M.K.H. Leong, V. Radisic, IEEE Microwave and Wireless Components Letters Thz PhotonicsElectrical EngineeringTerahertz DevicesTerahertz TechnologyEngineering	2011	105
Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers Ahmed Akgiray, S. Weinreb, Rémy Leblanc, IEEE Transactions on Microwave Theory and Techniques Gaas LnaElectrical EngineeringEngineeringGaas HemtsRf Semiconductor	2013	59
220-GHz Solid-State Power Amplifier Modules V. Radisic, K.M.K.H. Leong, Stephen Sarkozy, IEEE Journal of Solid-State Circuits Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency Device	2012	59
Zero-bias anomaly in quantum wires Stephen Sarkozy, F. Sfigakis, K. Das Gupta, Physical Review B Average Impurity SeparationQuantum ScienceElectrical EngineeringSpintronicsEngineering	2009	46
A 75 mW 210 GHz Power Amplifier Module V. Radisic, K.M.K.H. Leong, Stephen Sarkozy, Electrical EngineeringEngineeringRadio FrequencyRf SemiconductorHigh-frequency Device	2011	40
Scaling of InP HEMT Cascode Integrated Circuits to THz Frequencies W.R. Deal, K.M.K.H. Leong, X. B. Mei, Thz PhotonicsElectrical EngineeringDb GainThz FrequenciesEngineering	2010	39

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