IEEE Microwave and Wireless Components Letters · 2010 · 106 citations · 10 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave AmplifiersMicrowave Semiconductor DevicesSemiconductor HeterostructuresTerahertz PhotonicsCoplanar WaveguidesGainPeak GainTerahertz Semiconductor Devices
In this letter, we present an amplifier module operating at a frequency of 0.48 THz. This represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the art, and is the highest reported amplifier to date. The amplifier demonstrates a peak gain of 11.7 dB measured in a waveguide split-block housing. Sub 50-nm InP HEMT transistors with an estimated <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> > 1 THz are used to achieve this level of performance. The five stage amplifier is realized in coplanar waveguide, and uses monolithically integrated dipole probes to couple the chip from the WR 2.2 waveguide.
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Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz