P. H. Liu

Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

W.R. Deal, K.M.K.H. Leong, V. Radisic et al. · IEEE Microwave and Wireless Components Letters · 2011 · 106 citations

Engineering, Electrical Engineering, Microelectronics +16

Scaling of InP HEMT Cascode Integrated Circuits to THz Frequencies

W.R. Deal, K.M.K.H. Leong, X. B. Mei et al. · 2010 · 39 citations

Engineering, Electrical Engineering, Microelectronics +16

Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs

Y.C. Chou, D. Leung, R. Grundbacher et al. · Microelectronics Reliability · 2005 · 14 citations

Engineering, Electrical Engineering, Materials Science +13

Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications

R. Lai, X. B. Mei, Stephen Sarkozy et al. · 2010 · 13 citations

Engineering, Electrical Engineering, Electronic Materials +14

Sub-mW Operation of InP HEMT X-Band Low-Noise Amplifiers for Low Power Applications

Chu-Hsu Lin, X. B. Mei, Y.C. Chou et al. · 2009 · 11 citations

Engineering, Electrical Engineering, Materials Science +17