R. Grundbacher

Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power

Niklas Wadefalk, Anders Mellberg, I. Angelov et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 136 citations

Low-power Electronics, Cryogenic Broad-band Amplifiers, Electrical Engineering +11

Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting

Y.C. Chou, D. Leung, Ioulia Smorchkova et al. · Microelectronics Reliability · 2004 · 83 citations

Materials Engineering, Electrical Engineering, Engineering +6

Characterization of chemically assisted ion beam etching of InP

C. Youtsey, R. Grundbacher, Roberto R. Panepucci et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 63 citations

Materials Science, Engineering, Cl2 Ambient +13

Beyond G-band: a 235 GHz InP MMIC amplifier

Douglas Dawson, Lorene Samoska, A. Fung et al. · IEEE Microwave and Wireless Components Letters · 2005 · 41 citations

Electrical Engineering, Wafer Probes, Engineering +13

Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics

R. Tsai, M. Barsky, J.B. Boos et al. · 2003 · 40 citations

Electrical Engineering, Drain Biases, Engineering +9