R. Grundbacher - Concepedia

Author

R. Grundbacher

Northrop Grumman (United States)

Also Known As

R Grundbacher, R. Grundbacher, R.W. Grundbacher, Ronald Grundbacher

Publications

987

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)Redondo Optics (United States)University of Illinois Urbana-Champaign Jet Propulsion Laboratory

About

R. Grundbacher is an author at Northrop Grumman (United States) specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	27	809
2	Electrical Engineering	16	25	733
3	Applied Physics	13	18	597
4	Chemical Engineering	2	2	23
5	Education	1	1	41

R. Grundbacher

Publications

809

Citations

H-Index

Page 1

	Year	Citations
Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power Niklas Wadefalk, Anders Mellberg, I. Angelov, IEEE Transactions on Microwave Theory and Techniques Low-power ElectronicsCryogenic Broad-band AmplifiersElectrical EngineeringCryogenic Wide-bandEngineering	2003	136
Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting Y.C. Chou, D. Leung, Ioulia Smorchkova, Microelectronics Reliability Materials EngineeringElectrical EngineeringEngineeringCorrosionApplied Physics	2004	83
Characterization of chemically assisted ion beam etching of InP C. Youtsey, R. Grundbacher, Roberto R. Panepucci, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceEngineeringCl2 AmbientElectron-beam LithographyMicrofabrication	1994	63
Beyond G-band: a 235 GHz InP MMIC amplifier Douglas Dawson, Lorene Samoska, A. Fung, IEEE Microwave and Wireless Components Letters Electrical EngineeringWafer ProbesEngineeringRadio FrequencyMillimeter Wave Technology	2005	41
Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics R. Tsai, M. Barsky, J.B. Boos, Electrical EngineeringDrain BiasesEngineeringHigh-speed ElectronicsAlsb/inas Hemt	2003	40
0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band R. Grundbacher, R. Lai, M. Barsky, Electrical EngineeringEngineeringDb GainRf SemiconductorHigh-frequency Device	2003	38
Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs M.R. Murti, J. Laskar, S. Nuttinck, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsElectronic Engineering	2000	35
Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs Y.C. Chou, R. Grundbacher, D. Leung, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2004	35
InP HEMT amplifier development for G-band (140-220 GHz) applications R. Lai, M. Barsky, R. Grundbacher, Electrical EngineeringEngineeringRf SemiconductorHigh-frequency Device140-220 Ghz	2002	32
A 20-mW G-band Monolithic Driver Amplifier Using 0.07-μm InP HEMT P. Huang, R. Lai, R. Grundbacher, Electrical EngineeringEngineeringDrain VoltageRf SemiconductorHigh-frequency Device	2006	30

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