IEEE Transactions on Microwave Theory and Techniques · 2003 · 137 citations · 12 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesMicrowave AmplifiersNoiseNoise In Analog CircuitsNoise MeasurementPower AmplifiersInput NoiseInput-referred NoiseLow-frequency NoiseLow-noise AmplifiersNoise In AmplifiersNoise TemperaturePower ConsumptionTwo-stage Amplifier Design
This paper describes cryogenic broad-band amplifiers with very low power consumption and very low noise for the 4-8-GHz frequency range. At room temperature, the two-stage InP-based amplifier has a gain of 27 dB and a noise temperature of 31 K with a power consumption of 14.4 mW per stage, including bias circuitry. When cooled to 15 K, an input noise temperature of 1.4 K is obtained at 5.7 mW per stage. At 0.51 mW per stage, the input noise increases to 2.4 K. The noise measurements have been repeated at different laboratories using different methods and are found consistent.
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W-band InP wideband MMIC LNA with 30 K noise temperature
S. Weinreb, R. Lai, N. R. Erickson et al. · 2003 · 62 citations · Full text