IEEE MTT-S International Microwave Symposium digest · 2003 · 582 citations · 37 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice ModelingMicrowave Semiconductor DevicesNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesNoise PredictionConductanceElectron MobilityEquivalent CircuitsFrequency MeasurementHigh-electron-mobility TransistorsMicrowave ModelingNoise Parameter ExtractionNoise Parameters
A simple wideband noise model of microwave MESFETs (including modulation-doped FETs, high-electron-mobility transistors, etc.) is described and verified at room and cryogenic temperatures. Closed-form expressions for minimum noise temperature, optimum greater impedance, and noise conductance are given in terms of frequency, the elements of FET equivalent circuits, and the equivalent temperatures of intrinsic gate resistance and drain conductance. The model allows prediction of the noise parameters for a broad frequency range from a single frequency measurement of noise parameters.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Horst Rothe, Walter E. Dahlke · Proceedings of the IRE · 1956 · 417 citations
Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 345 citations