Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence

Abstract

A simple wideband noise model of microwave MESFETs (including modulation-doped FETs, high-electron-mobility transistors, etc.) is described and verified at room and cryogenic temperatures. Closed-form expressions for minimum noise temperature, optimum greater impedance, and noise conductance are given in terms of frequency, the elements of FET equivalent circuits, and the equivalent temperatures of intrinsic gate resistance and drain conductance. The model allows prediction of the noise parameters for a broad frequency range from a single frequency measurement of noise parameters.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>