W-band InP wideband MMIC LNA with 30 K noise temperature

Abstract

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMTs coupled with CPW circuit design. The paper describes the transistor model, as well as modeled and measured on-wafer and in-module results at both 300 K and 24 K operating temperatures for several samples of the device.