R. Lai

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

X. B. Mei, Wayne Yoshida, M. Lange et al. · IEEE Electron Device Letters · 2015 · 395 citations

Thz Photonics, Terahertz Technology, Engineering +18

THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

W.R. Deal, X. B. Mei, K.M.K.H. Leong et al. · IEEE Transactions on Terahertz Science and Technology · 2011 · 219 citations

Thz Photonics, Electrical Engineering, Engineering +12

Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power

Niklas Wadefalk, Anders Mellberg, I. Angelov et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 136 citations

Low-power Electronics, Cryogenic Broad-band Amplifiers, Electrical Engineering +11

Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

W.R. Deal, X. B. Mei, V. Radisic et al. · IEEE Microwave and Wireless Components Letters · 2010 · 105 citations

Amplifier Module, Thz Photonics, Electrical Engineering +13

A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz

Lorene Samoska, W.R. Deal, Goutam Chattopadhyay et al. · IEEE Transactions on Microwave Theory and Techniques · 2008 · 94 citations

Amplifier Module, Millimeter Wave Technology, Engineering +8