Concepedia

Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs

Y.C. Chou, D. Leung, R. Grundbacher, R. Lai, Qiang Kan, P. H. Liu, D. Eng, Thomas Block, A.K. Oki

Microelectronics Reliability · 2005 · 14 citations · 42 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilitySemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor ReliabilityDevice DegradationGate Oxide DegradationReliability DegradationSemiconductor Characterization

References

42

Breakdown walkout in pseudomorphic HEMT's

R. Menozzi, P. Cova, C. Canali et al. · IEEE Transactions on Electron Devices · 1996 · 92 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's

C. Canali, F. Castaldo, F. Fantini et al. · IEEE Electron Device Letters · 1986 · 73 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

HEMT degradation in hydrogen gas

P.C. Chao, Ming-Yih Kao, Karen J. Nordheden et al. · IEEE Electron Device Letters · 1994 · 71 citations

Engineering, Electrical Engineering, Materials Science +14

Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's

M. Borgarino, R. Menozzi, Y. Baeyens et al. · IEEE Transactions on Electron Devices · 1998 · 62 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

n-GaAs Schottky diodes metallized with Ti and Pt/Ti

A. K. Sinha, T. E. Smith, M. H. Read et al. · Solid-State Electronics · 1976 · 58 citations

Engineering, Electrical Engineering, Materials Science +12