K. Hikosaka

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations

Wide-bandgap Semiconductor, Electrical Engineering, Millimeter Wave Technology +14

High Electron Mobility Transistor Logic

Takashi Mimura, K. Joshin, S. Hiyamizu et al. · Japanese Journal of Applied Physics · 1981 · 121 citations

Room Temperature, Electrical Engineering, Electronic Devices +9

547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance

K. Shinohara, Y. Yamashita, Akira Endoh et al. · IEEE Electron Device Letters · 2004 · 116 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +14

Selective Dry Etching of AlGaAs-GaAs Heterojunction

K. Hikosaka, Takashi Mimura, K. Joshin · Japanese Journal of Applied Physics · 1981 · 100 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

K. Shinohara, Y. Yamashita, Akira Endoh et al. · IEEE Electron Device Letters · 2001 · 82 citations

Developed Pseudomorphic Hemts, Electrical Engineering, F/sub T/ +12