Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor +12

High Electron Mobility Transistor Logic

Takashi Mimura, K. Joshin, S. Hiyamizu, +2

Japanese Journal of Applied Physics

Room TemperatureElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics +7

547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance

K. Shinohara, Y. Yamashita, Akira Endoh, +5

IEEE Electron Device Letters

Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorPhysics +12

Selective Dry Etching of AlGaAs-GaAs Heterojunction

K. Hikosaka, Takashi Mimura, K. Joshin

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +10

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

K. Shinohara, Y. Yamashita, Akira Endoh, +4

IEEE Electron Device Letters

Developed Pseudomorphic HemtsElectrical EngineeringF/sub T/EngineeringPhysics +10

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, +5

Japanese Journal of Applied Physics

High Rf PerformanceWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor +7

Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

Y. Yamashita, Akira Endoh, K. Shinohara, +5

IEEE Electron Device Letters

Electrical EngineeringGhz Cutoff FrequencyEngineeringPhysicsHigh-frequency Device +9

Enhancement-Mode High Electron Mobility Transistors for Logic Applications

Takashi Mimura, S. Hiyamizu, K. Joshin, +1

Japanese Journal of Applied Physics

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesLogic Applications +9

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

K. Shinohara, Yoshimi Yamashita, Akira Endoh, +4

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceGhz Cutoff FrequencyEngineering +12

Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration

N. Harada, S. Kuroda, T. Katakami, +3

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +9