High Electron Mobility Transistor Logic

Abstract

A high electron mobility transistor (HEMT) logic is described. Ring oscillators with enhancement-mode switching and depletion-mode load HEMTs with a 1.7 µm-gate length have been fabricated to assess logic performance capability. Switching delays down to 56.5 ps at room temperature and down to 17.1 ps at liquid nitrogen temperature have been obtained. The switching delay of 17.1 ps is the lowest of all the semiconductor logic technologies reported thus far.