David F. Brown

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 482 citations

Wide-bandgap Semiconductor, Engineering, Innovative Device +16

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 291 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Digestion of environmental materials for analysis by inductively coupled plasma-atomic emission spectrometry

Neil R. McQuaker, David F. Brown, Paul D. Kluckner · Analytical Chemistry · 1979 · 257 citations

Engineering, Atomic Emission Spectroscopy, Altmetric Attention Score +17

N-polar GaN epitaxy and high electron mobility transistors

Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi et al. · Semiconductor Science and Technology · 2013 · 222 citations

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

S. Keller, Haoran Li, Matthew A. Laurent et al. · Semiconductor Science and Technology · 2014 · 215 citations

Materials Science, Materials Engineering, Electrical Engineering +15