David F. Brown - Concepedia

Author

David F. Brown

University of California, Santa Barbara ORCID

Also Known As

B Bowen, Brown, David John, D F Brown, D. Brown, D. F. BROWN, D. F. Brown, D.F. Brown, DAVID F. BROWN, David Brown, David F Brown

179

Publications

5.5K

Citations

H-Index

179

Concepts

All Affiliations

University of California, Santa Barbara HRL Laboratories (United States)Southern Regional Research Center The Ohio State University

About

David F. Brown is an author at University of California, Santa Barbara specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	69	4K
2	Health Sciences	11	11	301
3	Management	5	5	184
4	Business	4	4	95
5	Education	1	1	17

David F. Brown

Publications

5.1K

Citations

H-Index

Page 1

	Year	Citations
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications K. Shinohara, D. Regan, Yan Tang, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringInnovative DeviceOptoelectronic DevicesQuantum Engineering	2013	482
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz Yan Tang, K. Shinohara, D. Regan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh-speed ElectronicsRf Semiconductor	2015	291
Digestion of environmental materials for analysis by inductively coupled plasma-atomic emission spectrometry Neil R. McQuaker, David F. Brown, Paul D. Kluckner Analytical Chemistry EngineeringAtomic Emission SpectroscopyAltmetric Attention ScoreChemistrySpectrochemical Analysis	1979	257
N-polar GaN epitaxy and high electron mobility transistors Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi, Semiconductor Science and Technology	2013	222
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides S. Keller, Haoran Li, Matthew A. Laurent, Semiconductor Science and Technology Materials ScienceMaterials EngineeringElectrical EngineeringAluminium NitrideLow Impurity Incorporation	2014	215
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition S. Keller, N. Fichtenbaum, Feng Wu, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorChemical EngineeringEngineeringSurface Science	2007	183
Work based support, emotional exhaustion, and spillover of work stress to the family environment: A study of policewomen Briony M. Thompson, A Kirk, David F. Brown Stress and Health Emotional ExhaustionFamily EnvironmentMental HealthPolice PsychologySocial Work	2005	156
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth Sansaptak Dasgupta, Nidhi Nidhi, David F. Brown, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesGan Hemts	2010	141
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K. Shinohara, D. Regan, A. Corrion, SemiconductorsAggressive Lateral ScalingElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	95
92&#x2013;96 GHz GaN power amplifiers M. Micovic, A. Kurdoghlian, A. Margomenos, Wide-bandgap SemiconductorElectrical EngineeringEngineeringGate PeripheryRf Semiconductor	2012	95

Page 1