Matthew A. Laurent

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

S. Keller, Haoran Li, Matthew A. Laurent et al. · Semiconductor Science and Technology · 2014 · 220 citations

Engineering, Materials Engineering, Materials Science +17

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Dong Ji, Matthew A. Laurent, Anchal Agarwal et al. · IEEE Transactions on Electron Devices · 2016 · 98 citations

Engineering, Electrical Engineering, Electronic Materials +12

Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer

Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi et al. · IEEE Electron Device Letters · 2017 · 48 citations

Engineering, Electrical Engineering, Electronic Materials +14

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

Matthew A. Laurent, Geetak Gupta, Donald J. Suntrup et al. · Journal of Applied Physics · 2016 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒ<inf>max</inf>

Dan Denninghoff, Jing Lu, Matthew A. Laurent et al. · 2012 · 33 citations

Engineering, Electrical Engineering, Materials Science +12