Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer

Abstract

In this letter, a GaN-based current aperture vertical electron transistor (CAVET) with a p-type gate layer and an implantation-based current blocking structure is presented. The devices measured showed a breakdown voltage of 450 V and no dispersion. The factors limiting higher breakdown voltages in these devices were carefully studied and discussed. The devices were grown on sapphire and relied on a box-shaped Mg implanted current blocking scheme. This is the first demonstration of an implantation-based CAVET, grown on sapphire blocking of 450 V with respectable on-state characteristics.