Saptarshi Mandal

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Dong Ji, Matthew A. Laurent, Anchal Agarwal et al. · IEEE Transactions on Electron Devices · 2016 · 97 citations

Wide-bandgap Semiconductor, Active Mg-doped Gan, Electrical Engineering +13

Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer

Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi et al. · IEEE Electron Device Letters · 2017 · 48 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

Wenwen Li, Dong Ji, Ryo Tanaka et al. · IEEE Journal of the Electron Devices Society · 2017 · 30 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor

Saba Rajabi, Saptarshi Mandal, Burcu Ercan et al. · IEEE Electron Device Letters · 2019 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm⁻¹

Saptarshi Mandal, Mahadevabhat Kanathila, Christopher D. Pynn et al. · Semiconductor Science and Technology · 2018 · 17 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12