Ryo Tanaka - Concepedia

Author

Ryo Tanaka

Fuji Electric (Japan)ORCID

Also Known As

Konishi, H., Mehdi Ashtiani, R Tanaka, R. Tanaka, Ryo Tanaka, Takeshi Imura, Tanaka, R., Tanaka, Ryo

196

Publications

918

Citations

H-Index

Concepts

All Affiliations

Fuji Electric (Japan)National Institute for Materials Science University of Tsukuba National Institute of Advanced Industrial Science and Technology Tohoku University

About

Ryo Tanaka is an author at Fuji Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	430
2	Applied Physics	12	13	376
3	Electrical Engineering	11	13	374
4	Business	1	1	10
5	Materials Engineering	1	1	15

Ryo Tanaka

Publications

649

Citations

H-Index

Page 1

	Year	Citations
Demonstration of 1200 V/1.4 mΩ cm <sup>2</sup> vertical GaN planar MOSFET fabricated by an all ion implantation process Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Japanese Journal of Applied Physics	2019	105
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Masahiro Horita, Shinya Takashima, Ryo Tanaka, Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringHall-effect MeasurementsEngineering	2017	98
Superconductivity of FeSe<sub>0.5</sub>Te<sub>0.5</sub>Thin Films Grown by Pulsed Laser Deposition Yoshinori Imai, Ryo Tanaka, T. Akiike, Japanese Journal of Applied Physics	2010	59
Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Applied Physics Express Wide-bandgap SemiconductorGan Double-implanted MosfetsElectrical EngineeringSemiconductor DeviceEngineering	2019	53
Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process Wenwen Li, Dong Ji, Ryo Tanaka, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorRf Power Electronics	2017	30
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg Kohei Shima, Ryo Tanaka, Shinya Takashima, Applied Physics Letters Wide-bandgap SemiconductorVacancy-guided RedistributionElectrical EngineeringEngineeringPia Temperature	2021	30
Influence of implanted Mg concentration on defects and Mg distribution in GaN Ashutosh Kumar, Wei Yi, Jun Uzuhashi, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringMg Ion-implantationIon ImplantationDislocation Loops	2020	27
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates Ashutosh Kumar, Jun Uzuhashi, Tadakatsu Ohkubo, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringImplanted MgIon ImplantationMaterials Science	2019	26
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam Akira Uedono, Ryo Tanaka, Shinya Takashima, Scientific Reports	2021	25
Detection of Slit Defects on Backside of Steel Plate Using Low-Frequency Eddy-Current Testing Wataru Yoshimura, Ryo Tanaka, Teruyoshi Sasayama, IEEE Transactions on Magnetics Optical Eddy CurrentEngineeringNondestructive TestingMagnetic SensorSlit Defects	2018	23

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