Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

Abstract

Lateral GaN double-implanted MOSFETs (DIMOSFETs) on Mg ion implanted GaN layers with different Mg ion implantation doses have been evaluated to investigate the impact of Mg dose on MOS channel properties. It is demonstrated that the threshold voltage (Vth) and the field effect mobility (μfe) depend on the Mg dose. A maximum μfe of 173 cm2 V−1 s−1 has been obtained with a Vth of 2.2 V on the Mg implantation layer with a dose of 4.2 × 1013 cm−2. The obtained results indicate that the channel characteristics of a GaN DIMOSFET can be designed by p-type ion implantation.