Katsunori Ueno

Demonstration of 1200 V/1.4 mΩ cm ² vertical GaN planar MOSFET fabricated by an all ion implantation process

Ryo Tanaka, Shinya Takashima, Katsunori Ueno et al. · Japanese Journal of Applied Physics · 2019 · 114 citations

Engineering, Electrical Engineering, Electronic Materials +16

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Masahiro Horita, Shinya Takashima, Ryo Tanaka et al. · Japanese Journal of Applied Physics · 2017 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama et al. · Applied Physics Express · 2017 · 91 citations

Engineering, Electrical Engineering, Materials Engineering +17

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Kazunobu Kojima, Shinya Takashima, Masaharu Edo et al. · Applied Physics Express · 2017 · 87 citations

Engineering, Materials Engineering, Materials Science +17

Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

Akira Uedono, Shinya Takashima, Masaharu Edo et al. · physica status solidi (b) · 2017 · 77 citations

Engineering, Materials Engineering, Materials Science +17