The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima, +6

Journal of Applied Physics

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringPoint DefectsEngineering +10

Demonstration of 1200 V/1.4 mΩ cm ² vertical GaN planar MOSFET fabricated by an all ion implantation process

Ryo Tanaka, Shinya Takashima, Katsunori Ueno, +2

Japanese Journal of Applied Physics

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Masahiro Horita, Shinya Takashima, Ryo Tanaka, +6

Japanese Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringHall-effect MeasurementsEngineering +11

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Kazunobu Kojima, Shinya Takashima, Masaharu Edo, +6

Applied Physics Express

Materials EngineeringMaterials ScienceElectrical EngineeringGan SubstratePoint Defects +13

High-power-density MHz-switching monolithic DC-DC converter with thin-film inductor

Yasushi Katayama, Satoshi Sugahara, H. Nakazawa, +1

Low-power ElectronicsDc-dc Converter IcElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors) +9

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama, +5

Applied Physics Express

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +8

Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

Akira Uedono, Shinya Takashima, Masaharu Edo, +9

physica status solidi (b)

Materials ScienceAgglomeration Onset TemperatureElectrical EngineeringSemiconductor TechnologyEngineering +10

Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam

Akira Uedono, Shinya Takashima, Masaharu Edo, +5

physica status solidi (b)

Materials ScienceWide-bandgap SemiconductorIon ImplantationSemiconductor TechnologyEngineering +8

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, +5

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringGan SubstrateEngineering +13

High-efficiency DC-DC converter chip size module with integrated soft ferrite

Z. Hayashi, Yasushi Katayama, Masaharu Edo, +1

IEEE Transactions on Magnetics

Low-power ElectronicsElectrical EngineeringEnergy HarvestingEngineeringAdvanced Packaging (Semiconductors) +13