Shinya Takashima

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima et al. · Journal of Applied Physics · 2018 · 147 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Demonstration of 1200 V/1.4 mΩ cm ² vertical GaN planar MOSFET fabricated by an all ion implantation process

Ryo Tanaka, Shinya Takashima, Katsunori Ueno et al. · Japanese Journal of Applied Physics · 2019 · 114 citations

Engineering, Electrical Engineering, Electronic Materials +16

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Masahiro Horita, Shinya Takashima, Ryo Tanaka et al. · Japanese Journal of Applied Physics · 2017 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Marginal breakdown of the Fermi-liquid state on the border of metallic ferromagnetism

Robert P. Smith, M. Sutherland, G. G. Lonzarich et al. · Nature · 2008 · 95 citations

Natural Sciences, Physics, Condensed Matter Physics +15

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama et al. · Applied Physics Express · 2017 · 91 citations

Engineering, Electrical Engineering, Materials Engineering +17