Shinya Takashima

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima et al. · Journal of Applied Physics · 2018 · 143 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Demonstration of 1200 V/1.4 mΩ cm ² vertical GaN planar MOSFET fabricated by an all ion implantation process

Ryo Tanaka, Shinya Takashima, Katsunori Ueno et al. · Japanese Journal of Applied Physics · 2019 · 105 citations

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Masahiro Horita, Shinya Takashima, Ryo Tanaka et al. · Japanese Journal of Applied Physics · 2017 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Marginal breakdown of the Fermi-liquid state on the border of metallic ferromagnetism

Robert P. Smith, M. Sutherland, G. G. Lonzarich et al. · Nature · 2008 · 95 citations

Materials Science, Magnetism, Ferromagnetism +10

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Kazunobu Kojima, Shinya Takashima, Masaharu Edo et al. · Applied Physics Express · 2017 · 87 citations

Materials Engineering, Materials Science, Electrical Engineering +15