Kiyokazu Nakagawa - Concepedia

Author

Kiyokazu Nakagawa

University of Yamanashi

Also Known As

K Nakagawa, K. Nakagawa, Kiyokazu NAKAGAWA, Kiyokazu Nakagawa, Kiyokazu Nakagawa Kiyokazu Nakagawa

317

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

University of Yamanashi Hitachi (Japan)The University of Tokyo Tohoku University IHI Corporation (Japan)

About

Kiyokazu Nakagawa is an author at University of Yamanashi specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	86	2.8K
2	Applied Physics	30	79	2.5K
3	Chemical Engineering	6	6	218
4	Natural Sciences	2	2	35
5	Chemistry	2	2	46

Kiyokazu Nakagawa

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Observation of dislocations in cadmium telluride by cathodoluminescence microscopy Kiyokazu Nakagawa, K. Maeda, Shoji Takeuchi Applied Physics Letters Materials ScienceMaterials EngineeringIi-vi SemiconductorPhotoluminescenceEngineering	1979	189
Reverse temperature dependence of Ge surface segregation during Si-molecular beam epitaxy Kiyokazu Nakagawa, Masanobu Miyao Journal of Applied Physics Materials ScienceSemiconductorsReverse Temperature DependenceGe Surface SegregationEngineering	1991	103
Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures Toshifumi Irisawa, Shigeo Tokumitsu, Takanori Hattori, Applied Physics Letters Semiconductor TechnologyStrained Ge ChannelElectrical EngineeringEngineeringPhysics	2002	89
Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama, Applied Physics Express Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2017	85
Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	1999	82
High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure Masanobu Miyao, Eiichi Murakami, Hiroyuki Etoh, Journal of Crystal Growth High Hole MobilityStrained Ge ChannelElectrical EngineeringEngineeringModulation-doped P-si0.5ge0.5/ge/si1−xgex Heterostructure	1991	73
Solid-phase crystallization of Si1−xGex alloy layers Satoshi Yamaguchi, Nobuyuki Sugii, S. K. Park, Journal of Applied Physics Materials EngineeringMaterials ScienceNucleation RateEllipsometric SpectroscopySi1−xgex Alloy Layers	2001	71
Influence of siliconizing on the oxidation behavior of a γ-TiAl based alloy X.Y Li, Shogo Taniguchi, Y. Matsunaga, Intermetallics Materials ScienceMaterials EngineeringChemical EngineeringEngineeringOxidation Behavior	2003	69
Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si A. A. van Gorkum, Kiyokazu Nakagawa, Y. Shiraki Japanese Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringAtomic Layer DopingEngineering	1987	62
Growth and characterization of atomic layer doping structures in Si A. A. van Gorkum, Kiyokazu Nakagawa, Y. Shiraki Journal of Applied Physics Materials ScienceEpitaxial GrowthSingle Sb MonolayerEngineeringPhysics	1989	61

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