Kiyokazu Nakagawa

Observation of dislocations in cadmium telluride by cathodoluminescence microscopy

Kiyokazu Nakagawa, K. Maeda, Shoji Takeuchi · Applied Physics Letters · 1979 · 189 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +12

Reverse temperature dependence of Ge surface segregation during Si-molecular beam epitaxy

Kiyokazu Nakagawa, Masanobu Miyao · Journal of Applied Physics · 1991 · 103 citations

Materials Science, Semiconductors, Reverse Temperature Dependence +15

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Toshifumi Irisawa, Shigeo Tokumitsu, Takanori Hattori et al. · Applied Physics Letters · 2002 · 89 citations

Semiconductor Technology, Strained Ge Channel, Electrical Engineering +8

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama et al. · Applied Physics Express · 2017 · 85 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi et al. · Applied Physics Letters · 1999 · 82 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11