Wenwen Li

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Dong Ji, Matthew A. Laurent, Anchal Agarwal et al. · IEEE Transactions on Electron Devices · 2016 · 97 citations

Wide-bandgap Semiconductor, Active Mg-doped Gan, Electrical Engineering +13

880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

Dong Ji, Anchal Agarwal, Haoran Li et al. · IEEE Electron Device Letters · 2018 · 90 citations

Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Dong Ji, Chirag Gupta, Anchal Agarwal et al. · IEEE Electron Device Letters · 2018 · 73 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Flexible polyvinylidene fluoride(PVDF)/MXene(Ti3C2Tx)/Polyimide(PI) wearable electronic for body Monitoring, thermotherapy and electromagnetic interference shielding

Min Sang, Shuai Liu, Wenwen Li et al. · Composites Part A Applied Science and Manufacturing · 2021 · 68 citations

Materials Science, Wearable System, Biomedical Sensors +11

Single-frame wide-field nanoscopy based on ghost imaging via sparsity constraints

Wenwen Li, Zhishen Tong, Kang Xiao et al. · Optica · 2019 · 65 citations · Full text

Engineering, Microscopy, Advanced Imaging +28