Concepedia

Author

Dong Ji

University of California, DavisORCID

Also Known As

D. Ji, Dong Feng Ji, Dong Ji

37

Publications

853

Citations

15

H-Index

28

Concepts

All Affiliations

University of California, DavisUniversity of California, Santa BarbaraStanford UniversityIntel (United States)Arizona State University
DJ

About

Dong Ji is an author at University of California, Davis specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

13

17

656

2

Applied Physics

13

16

614

3

Electrical Engineering

13

17

656

4

Computer Engineering

1

1

42

5

Materials Engineering

1

1

20

Dong Ji

×

19

Publications

786

Citations

15

H-Index

YearCitations

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Dong Ji, Matthew A. Laurent, Anchal Agarwal,

IEEE Transactions on Electron Devices

2016

97

880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

Dong Ji, Anchal Agarwal, Haoran Li,

IEEE Electron Device Letters

2018

90

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

Dong Ji, Chirag Gupta, Silvia H. Chan,

2017

75

Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Dong Ji, Chirag Gupta, Anchal Agarwal,

IEEE Electron Device Letters

2018

73

Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET

Dong Ji, Srabanti Chowdhury

IEEE Transactions on Electron Devices

2015

67

Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer

Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi,

IEEE Electron Device Letters

2017

48

A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs

Dong Ji, Wenwen Li, Srabanti Chowdhury

IEEE Transactions on Electron Devices

2018

43

Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET

Dong Ji, Yuanzheng Yue, Jianyi Gao,

IEEE Transactions on Electron Devices

2016

42

Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m$\Omega\cdot$ cm<sup>2</sup>/1500 V GaN Diodes

Dong Ji, Siwei Li, Burcu Ercan,

IEEE Electron Device Letters

2019

42

Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation

Dong Ji, Anchal Agarwal, Wenwen Li,

IEEE Transactions on Electron Devices

2018

40

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