Dong Ji

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Dong Ji, Matthew A. Laurent, Anchal Agarwal et al. · IEEE Transactions on Electron Devices · 2016 · 97 citations

Wide-bandgap Semiconductor, Active Mg-doped Gan, Electrical Engineering +13

880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

Dong Ji, Anchal Agarwal, Haoran Li et al. · IEEE Electron Device Letters · 2018 · 90 citations

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

Dong Ji, Chirag Gupta, Silvia H. Chan et al. · 2017 · 75 citations

Wide-bandgap Semiconductor, Engineering, Peak Electric Field +20

Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Dong Ji, Chirag Gupta, Anchal Agarwal et al. · IEEE Electron Device Letters · 2018 · 73 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET

Dong Ji, Srabanti Chowdhury · IEEE Transactions on Electron Devices · 2015 · 67 citations

Engineering, Power Electronic Systems, Power Electronics +19