Geetak Gupta

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

Chirag Gupta, Yuuki Enatsu, Geetak Gupta et al. · physica status solidi (a) · 2016 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

1200V GaN Switches on Sapphire Substrate

Geetak Gupta, Masahito Kanamura, Brian L. Swenson et al. · 2022 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

Matthew A. Laurent, Geetak Gupta, Donald J. Suntrup et al. · Journal of Applied Physics · 2016 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Measurement of the hot electron mean free path and the momentum relaxation rate in GaN

Donald J. Suntrup, Geetak Gupta, Haoran Li et al. · Applied Physics Letters · 2014 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

Seshadri Kolluri, S. Keller, David F. Brown et al. · Journal of Applied Physics · 2010 · 32 citations

Engineering, Materials Engineering, Materials Science +17