Seshadri Kolluri

N-polar GaN epitaxy and high electron mobility transistors

Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi et al. · Semiconductor Science and Technology · 2013 · 222 citations

Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability

Chuan Xu, Seshadri Kolluri, Kazuhiko Endo et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2013 · 71 citations

Engineering, Mechanical Engineering, Analytical Thermal Model +20

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

Seshadri Kolluri, S. Keller, Steven P. DenBaars et al. · IEEE Electron Device Letters · 2011 · 48 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Modeling and Analysis of Self-Heating in FinFET Devices for Improved Circuit and EOS/ESD Performance

Seshadri Kolluri, Kazuhiko Endo, Eiichi Suzuki et al. · 2007 · 39 citations

Various Finfet Parameters, Engineering, Improved Circuit +16

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

Seshadri Kolluri, S. Keller, Steven P. DenBaars et al. · IEEE Electron Device Letters · 2011 · 36 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15