Yuuki Enatsu

In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates

Chirag Gupta, Cory Lund, Silvia H. Chan et al. · IEEE Electron Device Letters · 2017 · 165 citations

Engineering, Electrical Engineering, Electronic Materials +16

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET

Chirag Gupta, Silvia H. Chan, Yuuki Enatsu et al. · IEEE Electron Device Letters · 2016 · 79 citations

Engineering, Electrical Engineering, Materials Science +17

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

Chirag Gupta, Yuuki Enatsu, Geetak Gupta et al. · physica status solidi (a) · 2016 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

Chirag Gupta, Silvia H. Chan, Cory Lund et al. · Applied Physics Express · 2016 · 54 citations

Engineering, Electrical Engineering, Circuit Theory +13

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki et al. · Journal of Crystal Growth · 2010 · 47 citations

Natural Sciences, Materials Engineering, Materials Science +12