Brian L. Swenson - Concepedia

Concepedia

Author

Brian L. Swenson

University of California, Santa Barbara

Also Known As

B. L. Swenson, B. Swenson, B.L. Swenson, Brian L Swenson, Brian L. Swenson, Brian Swenson

34

Publications

1.3K

Citations

16

H-Index

31

Concepts

All Affiliations

University of California, Santa Barbara Transphorm (United States)Japan Science and Technology Agency National Institute of Information and Communications Technology

BL

About

Brian L. Swenson is an author at University of California, Santa Barbara specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	1.1K
2	Applied Physics	15	16	962
3	Electrical Engineering	15	16	997
4	Natural Sciences	1	1	16
5	Materials Engineering	1	1	15

Brian L. Swenson

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20

Publications

1.3K

Citations

16

H-Index

	Year	Citations
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringSuppress Dispersion	2011	178
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPlasma ExposureNanoelectronics	2008	161
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Srabanti Chowdhury, Brian L. Swenson, Man Hoi Wong, Semiconductor Science and Technology	2013	150
kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz Yifeng Wu, J. Gritters, L. Shen, IEEE Transactions on Power Electronics Electrical EngineeringEngineeringPower DeviceElectronic EngineeringGan Transistor	2013	111
Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface Brian L. Swenson, Umesh K. Mishra Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2009	108
Distribution of donor states on etched surface of AlGaN/GaN heterostructures Masataka Higashiwaki, Srabanti Chowdhury, Mao-Sheng Miao, Journal of Applied Physics Oxide HeterostructuresSemiconductorsElectrical EngineeringElectron DensityEngineering	2010	89
Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson, Applied Physics Letters Materials ScienceOxide HeterostructuresSemiconductorsWide-bandgap SemiconductorEngineering	2010	76
Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSelf-aligned Source/drain RegrowthE-mode Operation	2010	64
N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier Man Hoi Wong, Yi Pei, Rongming Chu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2008	50
600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates T. Kikkawa, Tsutomu Hosoda, Kenji Imanishi, Wide-bandgap SemiconductorElectrical EngineeringReliable Gan HemtsEngineeringGan Hemt	2014	44

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