kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

Abstract

kV-class GaN high electron mobility transistors built on low-cost Si substrate have been developed with proven switching performance. These devices show a blocking voltage >1200 V, low on-resistance <;0.19 Ω, and high switching speed >200 V/ns. A 3-kW 400 V:800 V hard-switched boost converter based on the GaN transistor achieves 99% efficiency at 100 kHz, well exceeding that of other competing semiconductors.